The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.
A Cornell collaboration has found a way to grow a single crystalline layer of alpha-aluminum gallium oxide that has the widest energy bandgap to date – a discovery that clears the way for new semiconductors that will handle higher voltages, higher power densities and higher frequencies than previously seen.
The collaboration was led by co-senior authors Debdeep Jena and Huili Grace Xing, both professors in electrical and computer engineering and in materials science and engineering. The team also included David Muller, the Samuel B. Eckert Professor in Applied and Engineering Physics, who specializes in electron microscopy, and Darrell Schlom, the Herbert Fisk Johnson Professor of Industrial Chemistry, who grows oxide materials for electronic uses.
Candidates must be able to demonstrate the ability to develop a highly successful and internationally recognized independent research program and to participate effectively in teaching the core AEP... Read more about Tenure-Track Assistant Professor sought for Applied and Engineering Physics, Cornell University
A new study has changed where scientists think Nickelate's superconducting ability might originate, providing a blueprint for how more functional versions might be engineered in the future. Read more about Origin of superconductivity in nickelates revealed
Data science, molecular mechanisms, unconventional computing for optimization and machine learning, wave interaction with engineered materials, electrocatalysis, and compound semiconductor devices are... Read more about Data science, wave interaction, semiconductors earn engineering research awards
